Researchers Pushing Moore’s Law With 1-nanometer Transistor Gate
We recently talked about the huge debate that took place about Moore’s Law being dead or not. You can check that out in more detail. Here we are going to talk about how researchers are now pushing the boundaries with the new 1-nanometer transistor gate.
The university of California at Berkeley researcher Sujai Desay says:
The semiconductor industry has long assumed that any gate below 5 nanometers wouldn’t work, so anything below that was not even considered.
Due to the use of carbon nanotubes, this thought has been rejected by UC Berkeley. The problem with using anything other than silicon when it comes to going under 5nm is controlling these materials. These transistors cannot be powered off and the flow of electrons has to be controlled. But since electrons are heavier they can be pushed through longer, smaller gates and hence the 1-nanometer transistor gate.
It should be noted that this is not the first time that something like this has been done. Back in 2008, researchers from the University of Manchester also created a 1-nanometer transistor gate. Korean scientists used FinFET to create a 3nm transistor back on 2006.
I know people are going to argue about the validity of Moore’s Law. You cannot deny that all this is happening whether you like it or not. What do you think about this 1-nanometer transistor gate?