Samsung Presents Its Z-SSD With Z-NAND Flash Memory
Samsung has announced their Z-SSD Series at the Flash Memory Summit in Santa Clara. Unfortunately, the South-Korean company wasn’t too eager to share detailed information about their Z-SSD’s, but we do know that the SSD will be using PCIe NVMe storage and Samsung’s recently developed Z-NAND flash memory. Z-NAND is very similar to regular NAND memory but features a custom design that should lead to better performance and characteristics. One of the current working theories of Samsung’s Z-NAND is that it is using 3D NAND or V-NAND in an SLC-setup in order to main fast reading and writing speeds, but this hasn’t been confirmed. If this were the case, the life expectancy of Z-NAND should also be significantly better due to using fewer bits per cell.
At the Cloud Expo Europe Samsung, Samsung has shown their Z-SSD in action along with the necessary benchmarks. The product uses a low-profile PCIe 3.0 x4 lane and has a total capacity of 800 GB. The solid state drive can achieve sequential read and write speeds up to 3.2 GB/s. The benchmark also shows 750,000 and 160,000 IOPS for random read and write, respectively.
The custom design of Samsung’s Z-SSD allows for a much lower latency than traditional NVMe SSD’s, and the South-Korean company claims their SSD performs 70% better in this regard. Not only the Z-NAND flash memory was used to achieve this result, but Samsung is also using a new type of controller. The company has promised to detail the workings of their new memory controller at Samsung Tech Days.
Early rumours of the Samsung Z-SSD mentioned storage capacities of 1, 2 and 4 TB. Samsung hasn’t announced the available storage capacities yet, although the SSD shown was 800 GB in size. It could be the case that Samsung has used overprovisioning to further improve performance and life expectancy of the 1 TB drive.
A price and release date are yet to be announced.