SK Hynix Launches High Density 8GB LPDDR4X
SK Hynix on Monday announced that it will be launching the world’s first high-density mobile DRAM, based on the Korean corporation’s dual-channel 16GB chips. The main application for these packages will be in next-generation mobile devices, as they will not only improve performance, but also draw less power from the host device.
The main reason for this lowered power consumption is that the new LPDDR4X runs at a lower output driver voltage of 0.6V, rather than the LPDDR4’s 1.1V, which SK Hynix claims gives it 20 percent better economy than its predecessor. These figures should be taken with a grain of salt as no independent verification has yet been concluded, theoretically however, the numbers should be correct.
The LPDDR4X has a bandwidth 34.1GB per second when connected to an application processor using a 64-bit memory bus, placing it firmly in the upper reaches of the market. It achieves this speed thanks to stacking four 16 GB DRAM parts that feature a 4266 MT/s data transfer rate.
The new memory chips are also smaller than ever before at 12 mm × 12.7 mm, which is scaled down 30 percent compared to the LPDDR4, and, since they measure only 1mm in thickness, it enables PoP stacking with a mobile processor or a UFS NAND storage device, ideal for placement in mobile devices.
Producing mobile devices with 8GB of DRAM is likely the wave of the future and SK Hynix has said it has already started mass producing the new 8GB LPDDR4X, with several manufacturers having shown interest already in using the compact, fast and powerful solution in their new devices. Currently, we know for certain that MediaTek’s Helio P20 and the Qualcomm Snapdragon 835 will contain this new generation of DRAM, for any further names we will likely know more once the Mobile World Congress rolls around next month.