HBM3 and Low Cost HBM In The Works; 2x Higher Bandwidth Than HBM2
Details regarding the next-generation High Bandwidth Memory (HBM) have been revealed at Hot Chips 28. According to what we’ve heard so far, there are two HBM2 successors in the works. These include the HBM3 and low-cost HBM designed to deliver increased bandwidth, decreased power consumption and increased capacities.
Samsung began HBM2 memory production back in Q1 2016 while SK Hynix is set to start production this quarter. At Hot Chips 28, both companies showcased their catalogs for HBM2 as well as discussed future HBM roadmaps.
Out of the two next-gen memory solutions, the low-cost HBM is being developed by Samsung. This new memory is faster than HBM1 but slower than HBM2 however, the key feature is its cost effectiveness. According to Samsung, these chips are easy to produce in large quantities and targeted at a mass market.
When compared to HBM2, the low-cost HBM features lesser TSVs (through silicon vias) with the number reduced to 512 on a stack. This results in a pin speed of 3 GB/s (+) that can deliver 200 GB/s against 256 GB/s on HBM2.
With an ever increasing demand for bandwidth and efficiency, the next iteration of HBM memory is already in works as well. SK Hynix is calling it HBM3 while Samsung has termed its next solution as xHBM or Extreme HBM.
The specifications of HBM3 are not finalized yet but what we know from the discussion during Hot Chips is that it would feature bandwidth that is at least 2x higher than HBM2 and double the capacity per chip. Given HBM2 can go as high as 48 GB in terms of capacity, we expect around 64 GB for the next-gen memory when it arrives.
Other points in consideration for HBM3 are low power consumption and a very attractive pricing however, don’t expect it to arrive until 2019.
At this point, that is all we know about the next-gen HBM. We will update you when we hear more on the topic.