Samsung Manages To Beat Intel And TSMC In 10nm Chipset Race, First Device Expected In Early 2017
Samsung has gained a headstart over Intel and TSMC when it comes to development of 10nm chipsets. The company announced that it has started development on 10nm 128Mb processor cache S-RAM memory which seems to suggest that their rumored 10nm mobile chipset might not be far behind. These S-RAM modules will be the key to maintaining high performance in next generation devices.
Compared to the currently used 14nm processing technology, which is also relatively new, the advantages of using 10nm are numerous with the biggest one being smaller chips with same performance at a much lesser power consumption thanks to an approximately 40% reduction in cell footprint.
Since Intel postponed its 10nm nodes for 2017, Samsung has seemingly already won the race with TSMC to out the first 10nm FinFET production lines next year, and have a retail device on 10nm chipsets by early 2017, just in time for an eventual Galaxy S8. The inevitable, though not yet officially announced, Galaxy S7 will however be running on the 14nm process.
Samsung will apparently be ready to mass produce the new generation of S-RAM modules in early 2017. By then, the company is expected to showcase the new technology at the International Solid-State Circuits Conference (ISSCC) which will be held next year between January 31 and February 4.
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