IBM Researchers Announce a Breakthrough in Transistor Engineering
IBM Researchers claim to be neering a remarkable achievement in Transistor Engineering, and we may soon see the dawn of 1.8nm transistor devices.
Engineers claim that carbon nanotubes can replace silicon transistors with help of a new method, that shrink transistor contacts without affecting performance of carbon nanotube devices. This may enable the creation of smaller yet more powerful devices. IBM has managed to reduce contact resistance.
According to Dario Gil, vice president of Science and Technology:
For any advanced transistor technology, the increase in contact resistance due to the decrease in the size of transistors becomes a major performance bottleneck. Our approach is to make the contact from the end of the carbon nanotube, which we show does not degrade device performance. This brings us a step closer to the goal of a carbon nanotube technology within the decade.
The main problem engineers faced was commensurate drop in performance after reducing the size of contacts. To solve this issue, metallurgical process was created where microscopic welding is used to chemically bind carbon atoms located at the ends of carbon nanotubes.
This helps engineers shrink contacts to less than 10nm. We are moving slowly and steadily towards carbon nanotubes devices and this breakthrough will give a significant boost to the field.