Samsung 256Gb, 3D V-NAND Offers Twice the Storage of SSDs In Same Size
Today, Samsung announced that it has begun mass production of the industry’s first 256-gigabit (Gb), 3D V-NAND flash memory. The next-gen 3D V-NAND, which is based on 48 layers of 3-bit multi-level-cell (MLC), will pave the way for higher-storage SSDs.
“With the introduction of our 3rd generation V-NAND flash memory to the global market, we can now provide the best advanced memory solutions, with even higher efficiency based on improved performance, power utilization and manufacturing productivity, thereby accelerating growth of the high-performance and the high-density SSD markets,” said Young-Hyun Jun, President of the Memory Business at Samsung Electronics.
“By making full use of Samsung V-NAND’s excellent features, we will expand our premium-level business in the enterprise and data center market segments, as well as in the consumer market, while continuing to strengthen our strategic SSD focus.”
The new 3D V-NAND flash memory can hold 85.3 billion cells, with each cell holding 3 bits of data, resulting 256 billion bits, or 256Gb – which is 2x the density of conventional 128Gb NAND flash chips. Samsung further mentions that the latest generation V-NAND consumes up to 30 percent less power compared to 128Gb V-NAND chip when storing the same amount of data.
Moreover, the new chip achieves productivity gains of approximately 40 percent when seen against the previous generation offering.
Samsung says it will produce the 3rd generation 48-layer 3-bit MLC V-NAND throughout the remainder of 2015, and and will be focusing on the data storage segments with leading-edge PCIe NVMe and SAS interfaces. The company also promises to introduce consumer-centric offerings with the new flash memory later this year.