Toshiba Reveals 256GB TLC NAND Flash Memory Chip
Toshiba has recently unveiled a 256GB NAND flash memory incorporating 48 layer BICS that features TLC. This architecture has a wide array of applications ranging from SSDs, smartphones, tablets, memory cards and Enterprise SSDs.
3D NAND flash drive is a type of flash memory in which memory cells are stacked on top of each other which makes for a better storage solution taking less physical space. It also improves electrical efficiency by reducing the distance between the cells.
TLC (Triple Level Cell Flash) is a kind of flash memory which stores 3 bits of data per cell on the flash media. It doubles the amount of data that can be stored on the same die while using a SLC (Single Level Cell). SLC stores one bit per cell. Which means that TLC adds 50% more storage capacity to an SLC flash media.
Scott Nelson, senior vice president of TAEC’s Memory Business Unit, stated that:
From day one, Toshiba’s strategy has been to extend our floating gate technology, which features the world’s smallest 15nm 128Gb die*3. Our announcement of BICS FLASH, the industry’s first 48-layer 3D technology, is very significant in that we are enabling a competitive, smooth migration to 3D flash memory – to support the storage market’s demand for ever-increasing densities.
Although this research is ground-breaking, it is highly unlikely that we can see TLC NAND flash drives before 2016.
Previously, Toshiba has also announced a 128GB NAND Flash drive featuring 2bit MLC architecture. MLC, short for Multi level cell, can store 2 bits of information per cell. These flash drives will be produced in Yokkaichi Operations by Toshiba.