Intel and Micron Announce 3D XPoint, The Next Generation of Memory
There is a new collaboration in the town, Intel and Micron have teamed up to develop the next generation of memory. In the press conference held yesterday, the companies announced their plans to the world and it looks like we are about to get our hands on some awesome next generation of memory.
Recently, the 750 SSD was launched by Intel and it was amazing. They took NAND to another platform that has better utilized. This new technology is something that we haven’t yet seen in the market around us. The 3D XPoint (3D Cross Point) looks like the real and true next generation memory.
The NAND technology has been improved over the year though, but it still is 25 years old. It’s high time now that we get the new kind of memory. The 3D XPoint provides speed up to 1000 times faster than NAND and it is a new type of non-volatile memory.
The 3D XPoint is also said to be 1000 times more durable and 10 times (or more) denser than the usual memory.
Although the idea itself isn’t new but no one in the past has gathered the courage to do so. Intel and Micron are using new materials combined in a different way to produce massively.
The change of the bulk material property where the entire division modifies in its place of just being electron-based is what makes more capacity in denser storage. Currently, they are producing 128Gbit sizes.
The 3D stacking in this one is different than the one used in 3D NAND. It allows for expansion without affecting the performance. Although the 3D NAND allows for more capacity, this new technology is what will allow better speed.
In case of power failures, your data won’t disappear, this is termed as the main reason for this technology as well as better security. Good news is that the next-gen of memory will be out in 2016 without any supply shortages.