Intel, Micron Unveil New 3D NAND To Enable Data Storage Upto 10TB
Intel and Micron now let you avail new 3D NAND chips for SSDs, which are reflection of a great advancement in the flash memory technology with three times greater storage capacity than other non-volatile memory technologies.
The announcement makes a good news not only for people with laptops but also for those who run data centers, use cellphones, tablets, and other mobile devices.
The newly introduced 3D NAND technology maximizes the capacity of storage devices by stacking layers of floating gate flash cells (data storage cells). This technique enables NAND dies store up to 256 gigabits by stacking flash cells in 32 layers of data in MLC and 48GB of data in TLC mode.
For your understanding of MLC and TLC, the former offers greater durability while the latter is considered to be capable of storing more data using same space as MLC would otherwise for less data. Both the flashes outclass majority of the NAND dies present in the market. Most of those chips can only store data up to 16GB.
In addition to the higher storage capacity, the technology promises cost saving, and better performance as well. As the companies explain:
One of the most significant aspects of this technology is in the foundational memory cell itself. Intel and Micron chose to use a floating gate cell, a universally utilized design refined through years of high-volume planar flash manufacturing. This is the first use of a floating gate cell in 3D NAND, which was a key design choice to enable greater performance and increase quality and reliability.
According to the companies, a standard 2.5-inch SSD is capable to store about 10TB of data where most of the available drives could not keep data more than 1TB. Similarly, smaller drives — with size as small as a “stick of gum” — can store about 3.5TB of data for Ultrabooks and mini desktops. If we compare this storage capability with current small drives, there is a huge difference as most of these can not exceed the data limit of 512GB.
“Micron and Intel’s collaboration has created an industry-leading solid-state storage technology that offers high density, performance and efficiency and is unmatched by any flash today,” said Brian Shirley, VP of Memory Technology and Solutions at Micron.
“This 3D NAND technology has the potential to create fundamental market shifts. The depth of the impact that flash has had to date-from smartphones to flash-optimized supercomputing-is really just scratching the surface of what’s possible.”
Indeed, Micron and Intel’s partnership has made an impressive beginning.
Abubaker Zahoor writes on diverse topics with special interest in innovations, tech-ethics, and inter-and intra- organizational business relationships.